Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 25, 2015
Patent Application Number
13836080
Date Filed
March 15, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device, including: a first transistor sharing a first diffusion with a second transistor; a third transistor sharing a second diffusion with the second transistor; and at least one programmable resistor; wherein the at least one programmable resistor is connected to the first diffusion and the second diffusion, wherein the at least one programmable resistor includes one of the following: memristor, transition metal oxides, polymeric memristor, ferroelectric memristor, spintronic memristor, spin transfer torque, phase-change structure, programmable metallization structure, conductive-bridging structure, magnetoresistive structure, chalcogenide structure.
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