US Patent 9117749 Semiconductor device and structure

A semiconductor device, including: a first transistor sharing a first diffusion with a second transistor; a third transistor sharing a second diffusion with the second transistor; and at least one programmable resistor; wherein the at least one programmable resistor is connected to the first diffusion and the second diffusion, wherein the at least one programmable resistor includes one of the following: memristor, transition metal oxides, polymeric memristor, ferroelectric memristor, spintronic memristor, spin transfer torque, phase-change structure, programmable metallization structure, conductive-bridging structure, magnetoresistive structure, chalcogenide structure.