Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 22, 2015
Patent Application Number
14516545
Date Filed
October 16, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for manufacturing a FinFET includes forming a merging spacer, through a plurality of sidewall pattern-transferring processes, and modifying a first interval between adjacent first mandrels as shorter than twice of thicknesses of a nitride layer, which is formed on the first mandrels and contoured thereto, followed by a first spacer being formed on a sidewall thereof, so that a FinFET composed of a plurality of fin-shaped structures having a non-integral multiple of pitches as well as an integral multiple of pitches can be manufactured.
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