US Patent 9142641 Method for manufacturing finFET
Patent 9142641 was granted and assigned to United Microelectronics Corporation on September, 2015 by the United States Patent and Trademark Office.
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Patent abstract
A method for manufacturing a FinFET includes forming a merging spacer, through a plurality of sidewall pattern-transferring processes, and modifying a first interval between adjacent first mandrels as shorter than twice of thicknesses of a nitride layer, which is formed on the first mandrels and contoured thereto, followed by a first spacer being formed on a sidewall thereof, so that a FinFET composed of a plurality of fin-shaped structures having a non-integral multiple of pitches as well as an integral multiple of pitches can be manufactured.
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US Patent 09142641 Method for manufacturing finFET US Patent 9142641 Method for manufacturing finFET
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Patent Number
0914264100
Patent Number
914264100
Edits on 30 Apr, 2023
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Patent Jurisdiction
Patent Number
091426410
Date of Patent
September 22, 2015
0Patent Application Number
145165450
Date Filed
October 16, 2014
0Official Website
Patent Primary Examiner
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Patent Applicant
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Current Assignee
0
Patent Jurisdiction
Patent Number
091426410
Date of Patent
September 22, 2015
0Patent Application Number
145165450
Date Filed
October 16, 2014
0Official Website
Patent Primary Examiner
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US Patent 09142641 Method for manufacturing finFET
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Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09142641
Date of patent
September 22, 2015
Patent application number
14516545
Date Filed
October 16, 2014
Patent primary examiner
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