Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 22, 2015
Patent Application Number
13468313
Date Filed
May 10, 2012
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor structure including expanded source/drain regions that extend in an opposite direction of a gate electrode is provided. The semiconductor structure includes a stack of a body-containing region and a buried insulator portion, a gate dielectric in contact with a surface of the body-containing region, a gate electrode in contact with the gate dielectric, and a source region and a drain region laterally spaced by, and in contact with, the stack. The semiconductor structure further includes a contact level dielectric layer deposited on surfaces of the source region, the drain region and the buried insulator portion.
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