Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ruilong Xie0
Takeshi Nogami0
Julien Frougier0
Albert M. Young0
Kangguo Cheng0
Roy R. Yu0
Brent Anderson0
Balasubramanian Pranatharthiharan0
Date of Patent
November 5, 2024
0Patent Application Number
174817060
Date Filed
September 22, 2021
0Patent Citations
0
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Patent Primary Examiner
CPC Code
Patent abstract
A semiconductor device includes a dielectric isolation layer, a plurality of gates formed above the dielectric isolation layer, a plurality of source/drain regions above the dielectric isolation layer between the plurality of gates, and at least one contact placeholder for a backside contact. The at least one contact placeholder contacts a bottom surface of a first source/drain region of the plurality of source/drain regions. The semiconductor device further includes at least one backside contact contacting a bottom surface of a second source/drain region of the plurality of source/drain regions, and a buried power rail arranged beneath, and contacting the at least one backside contact.
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