Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Seok-Hoon Kim0
Byeong-Chan Lee0
Dong-Chan Suh0
Date of Patent
January 19, 2016
Patent Application Number
13932047
Date Filed
July 1, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating a semiconductor device comprises forming a dummy gate pattern and a spacer that is arranged on a sidewall of the dummy gate pattern on a substrate, forming an air gap on both sides of the dummy gate pattern by removing the spacer, exposing the substrate by removing the dummy gate pattern, and sequentially forming a gate insulating film including a high-k insulating film and a metal gate electrode on the exposed substrate.
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