US Patent 9240461 Method for fabricating semiconductor device
Patent 9240461 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on January, 2016 by the United States Patent and Trademark Office.
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Patent abstract
A method for fabricating a semiconductor device comprises forming a dummy gate pattern and a spacer that is arranged on a sidewall of the dummy gate pattern on a substrate, forming an air gap on both sides of the dummy gate pattern by removing the spacer, exposing the substrate by removing the dummy gate pattern, and sequentially forming a gate insulating film including a high-k insulating film and a metal gate electrode on the exposed substrate.
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Patent Inventor Names
Byeong-Chan Lee0
Dong-Chan Suh0
Seok-Hoon Kim0
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Official Website
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Patent Citations Received
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US Patent 09240461 Method for fabricating semiconductor device US Patent 9240461 Method for fabricating semiconductor device
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Patent Number
09240461
Patent Number
9240461
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US Patent 09240461 Method for fabricating semiconductor device
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Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09240461
Date of patent
January 19, 2016
Patent application number
13932047
Date Filed
July 1, 2013
Patent primary examiner
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