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US Patent 9287403 FinFET and method for manufacturing the same
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Patent
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Date Filed
December 5, 2014
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Date of Patent
March 15, 2016
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Patent Application Number
14561472
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Patent Citations Received
US Patent 11855193 Fin field-effect transistor device and method of forming the same
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US Patent 11705327 Low-k feature formation processes and structures formed thereby
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US Patent 11705502 Method for laterally etching gate spacers
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Patent Inventor Names
Wei-Yang Lee
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Ting-Yeh Chen
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
9287403
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Patent Primary Examiner
Mohsen Ahmadi
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