Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 12, 2016
Patent Application Number
14514900
Date Filed
October 15, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
Merged fin structures for finFET devices and methods of manufacture are disclosed. The method of forming the structure includes forming a plurality of fin structures on an insulator layer. The method further includes forming a faceted structure on adjacent fin structures of the plurality of fin structures. The method further includes spanning a gap between the faceted structures on the adjacent fin structures with a semiconductor material.
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