Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Che-Cheng Chang
Chih-Han Lin
Date of Patent
October 31, 2023
Patent Application Number
17227631
Date Filed
April 12, 2021
Patent Citations
...
Patent Primary Examiner
Patent abstract
A semiconductor device includes a semiconductor device and a semiconductor fin on the semiconductor substrate, in which the semiconductor fin has a fin isolation structure at a common boundary that is shared by the two cells. The fin isolation structure has an air gap extending from a top of the semiconductor fin to a stop layer on the semiconductor substrate. The air gap divides the semiconductor fin into two portions of the semiconductor fin. The fin isolation structure includes a dielectric cap layer capping a top of the air gap.
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