Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 15, 2016
Patent Application Number
14883445
Date Filed
October 14, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a semiconductor device and a semiconductor fin on the semiconductor substrate, in which the semiconductor fin has a fin isolation structure at a common boundary that is shared by the two cells. The fin isolation structure has an air gap extending from a top of the semiconductor fin to a portion of the semiconductor substrate. The air gap divides the semiconductor fin into two portions of the semiconductor fin. The fin isolation structure includes a dielectric cap layer capping a top of the air gap.
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