Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroyuki Kunishima0
Ken Ozawa0
Date of Patent
April 12, 2016
0Patent Application Number
147478910
Date Filed
June 23, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device having a capacitor which includes a first electrode electrically coupled to a transistor and a second electrode separate from the first electrode and covered with an interlayer insulating film, in which a plurality of coupling holes are formed in the interlayer insulating film and are in contact with the second electrode at the lower ends; and, when the capacitance of the second electrode is represented by C [nF] and the total area of the lower ends of the coupling holes is represented by A [μm2], the following expression (1) is satisfied.C/A≦1.98 [nF/μm2] (1)
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