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US Patent 9318594 Semiconductor devices including implanted regions and protective layers

Patent 9318594 was granted and assigned to Wolfspeed on April, 2016 by the United States Patent and Trademark Office.

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Patent abstract

A semiconductor structure includes a Group III-nitride semiconductor layer, a protective layer on the semiconductor layer, a distribution of implanted dopants within the semiconductor layer, and an ohmic contact extending through the protective layer to the semiconductor layer.

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