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US Patent 9362355 Nanosheet MOSFET with full-height air-gap spacer

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
November 13, 2015
Date of Patent
June 7, 2016
Patent Application Number
14940685
Patent Citations Received
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US Patent 11990374 Method for forming sidewall spacers and semiconductor devices fabricated thereof
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US Patent 11705396 Method to form air gap structure with dual dielectric layer
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US Patent 11715761 Semiconductor device with air gap on gate structure and method for forming the same
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US Patent 11758736 Ferroelectric random access memory devices and methods
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US Patent 11677010 Method of manufacturing a semiconductor device and a semiconductor device
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US Patent 11688632 Semiconductor device with linerless contacts
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9362355
Patent Primary Examiner
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Allan R. Wilson

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