Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 12, 2016
Patent Application Number
14964338
Date Filed
December 9, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
According to one embodiment, a semiconductor memory device includes a memory cell transistor and a word line connected to the memory cell transistor. A threshold voltage of the memory cell transistor is shifted to a negative voltage side by applying an erase pulse to the memory cell transistor. When the erase pulse is applied, if the threshold voltage of the memory cell transistor is higher than or equal to a first voltage, a second voltage is applied to the word line. If the threshold voltage of the memory cell transistor is lower than the first voltage and higher than or equal to a third voltage which is lower than the first voltage, a fourth voltage which is higher than the second voltage is applied to the word line.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.