Patent attributes
A semiconductor memory device according to an embodiment comprises a stacked body, the stacked body including a plurality of conductive layers disposed on a semiconductor substrate and an inter-layer insulating film disposed between the plurality of conductive layers. A columnar semiconductor layer is surrounded as a stacking direction of the stacked body. An isolation film extends from an outer surface of the stacked body to a bottom of the stacked body and has a longitudinal direction in a second direction. At least some of the isolation films include a base portion extending in the second direction and a terminal portion positioned at an end of the base portion, and a width of the end in a third direction intersecting the second direction is larger than a width of the base portion.
