Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wenguang Shi0
Simon Shi-Ning Yang0
Steve Weiyi Yang0
Zhenyu Lu0
Feng Pan0
Weihua Cheng0
Jun Chen0
Guanping Wu0
Date of Patent
November 5, 2024
0Patent Application Number
182213580
Date Filed
July 12, 2023
0Patent Citations
...
Patent Primary Examiner
Patent abstract
A three-dimensional (3D) NAND memory device includes a substrate, a staircase region including a first stack and a second stack, a barrier structure extending vertically through the first stack and laterally separating the first stack from the second stack, and a through array contact extending vertically through the first stack to the substrate. The first stack is disposed on the substrate and includes first and second dielectric layers arranged alternately in a vertical direction. The second stack is disposed on the substrate and includes conductor layers and third dielectric layers arranged alternately in the vertical direction. The barrier structure has an unclosed shape.
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