Patent attributes
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a substrate having a trench, a stacked structure, an etching stop structure, a plurality of memory structure, and a first filled slit groove formed in the stacked structure. The stacked structure has a horizontal extended region and a vertical extended region extending along a sidewall of the trench. The stacked structure includes a plurality of conductive layer s and a plurality of insulating layers interlacedly stacked in the trench. The etching stop structure is formed in the vertical extended region. The memory structures vertically penetrate through the conductive layers and the insulating layers in the horizontal extended region. The conductive layers and the insulating layers in the vertical extended region are formed on the etching stop structure and located between the etching stop structure and the first filled slit groove.
