Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 26, 2016
Patent Application Number
13619598
Date Filed
September 14, 2012
Patent Citations Received
Patent Primary Examiner
Patent abstract
A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.
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