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US Patent 9401452 P-side layers for short wavelength light emitters

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Patent Citations Received
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US Patent 11862750 Optoelectronic device
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Patent abstract

A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.

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US Patent 09401452 P-side layers for short wavelength light emitters US Patent 9401452 P-side layers for short wavelength light emitters

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Patent Number
0940145200
Patent Number
940145200
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=0940145200
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Infobox
Is a
Patent
Patent
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
094014520
Date of Patent
July 26, 2016
0
Patent Application Number
136195980
Date Filed
September 14, 2012
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=094014520
Patent Primary Examiner
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Kevin Parendo
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
094014520
Date of Patent
July 26, 2016
0
Patent Application Number
136195980
Date Filed
September 14, 2012
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=094014520
Patent Primary Examiner
‌
Kevin Parendo
0
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https://pdfpiw.uspto.gov/.piw?Docid=09401452
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 US Patent 09401452 P-side layers for short wavelength light emitters

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
09401452
Date of patent
July 26, 2016
Patent application number
13619598
Date Filed
September 14, 2012
Patent primary examiner
‌
Kevin Parendo

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