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US Patent 9406738 Inductive structure formed using through silicon vias

Patent 9406738 was granted and assigned to Xilinx on August, 2016 by the United States Patent and Trademark Office.

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Patent abstract

An inductor for an integrated circuit can include a first turn comprising a first through silicon via (TSV) coupled to a second TSV. The inductor can include a third TSV coupled to the second TSV.

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