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US Patent 9406738 Inductive structure formed using through silicon vias

Patent 9406738 was granted and assigned to Xilinx on August, 2016 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 12008302 Integrated circuit with thicker metal lines on lower metallization layer
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Patent Citations Received
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US Patent 11863081 Integrated voltage regulator with integrated air-core inductor
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Patent abstract

An inductor for an integrated circuit can include a first turn comprising a first through silicon via (TSV) coupled to a second TSV. The inductor can include a third TSV coupled to the second TSV.

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Patent Inventor Names
James Karp0
Vassili Kireev0
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=094067380
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US Patent 09406738 Inductive structure formed using through silicon vias US Patent 9406738 Inductive structure formed using through silicon vias

Infobox
Patent Number
094067380
Patent Number
94067380
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"Entity importer update"
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Infobox
Is a
Patent
Patent
0
Current Assignee
Xilinx
Xilinx
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
094067380
Date of Patent
August 2, 2016
0
Patent Application Number
131872340
Date Filed
July 20, 2011
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=094067380
Patent Primary Examiner
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Moazzam Hossain
0
Edits on 5 Jun, 2022
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=09406738
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 US Patent 09406738 Inductive structure formed using through silicon vias

Infobox
Is a
Patent
Patent
Current assignee
Xilinx
Xilinx
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
09406738
Date of patent
August 2, 2016
Patent application number
13187234
Date Filed
July 20, 2011
Patent primary examiner
‌
Moazzam Hossain

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