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US Patent 9425392 RRAM cell structure with laterally offset BEVA/TEVA
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Patent
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Date Filed
July 20, 2015
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Date of Patent
August 23, 2016
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Patent Application Number
14803377
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Patent Citations Received
US Patent 12069971 Switching layer scheme to enhance RRAM performance
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Patent Inventor Names
Chin-Chieh Yang
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Wen-Chun You
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Wen-Ting Chu
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Yu-Wen Liao
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Chih-Yang Chang
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Hsia-Wei Chen
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Kuo-Chi Tu
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Sheng-Hung Shih
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
9425392
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Patent Primary Examiner
Matthew Landau
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