Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Cheng-Yuan Tsai0
Hai-Dang Trinh0
Wen-Ting Chu0
Hsing-Lien Lin0
Date of Patent
August 20, 2024
0Patent Application Number
183134750
Date Filed
May 8, 2023
0Patent Citations
...
Patent Primary Examiner
Patent abstract
The present disclosure relates to a resistive random access memory (RRAM) device. The RRAM device includes a first electrode over a substrate and a second electrode over the substrate. A data storage structure is disposed between the first electrode and the second electrode. The data storage structure includes a first metal and a second metal. The first metal has a peak concentration at a first distance from the first electrode and the second metal has a peak concentration at a second distance from the first electrode. The first distance is different than the second distance.
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