Patent attributes
The present disclosure relates to an RRAM cell having a multi-layer bottom electrode with an insulating core, which provides for good gap fill ability, and an associated method of formation. In some embodiments, the RRAM cell has a multi-layer bottom electrode with an insulating bottom electrode (BE) layer arranged laterally between sidewalls of a conductive lower BE layer and vertically between the conductive lower BE layer and a conductive upper BE layer. A dielectric data storage layer having a variable resistance is arranged over the multi-layer bottom electrode, and a top electrode is arranged over the dielectric data storage layer. The insulating core of the bottom electrode is better able to fill gaps with large aspect ratios than conductive materials, thereby giving the multi-layer bottom electrode a planar upper surface that avoids topography problems in overlying layers.
