US Patent 12069971 Switching layer scheme to enhance RRAM performance
Patent 12069971 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2024 by the United States Patent and Trademark Office.
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US Patent 12069971 Switching layer scheme to enhance RRAM performance
Article
Patent abstract
The present disclosure relates to a resistive random access memory (RRAM) device. The RRAM device includes a first electrode over a substrate and a second electrode over the substrate. A data storage structure is disposed between the first electrode and the second electrode. The data storage structure includes a first metal and a second metal. The first metal has a peak concentration at a first distance from the first electrode and the second metal has a peak concentration at a second distance from the first electrode. The first distance is different than the second distance.
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Cheng-Yuan Tsai0
Hai-Dang Trinh0
Hsing-Lien Lin0
Wen-Ting Chu0
Date of Patent
August 20, 2024
0Patent Application Number
183134750
Date Filed
May 8, 2023
0Patent Citations
Patent Primary Examiner
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