Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 9, 2017
Patent Application Number
14605023
Date Filed
January 26, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
A resistive random access memory (RRAM) cell with a high κ layer based on a group-V oxide and hafnium oxide is provided. The RRAM cell includes a bottom electrode layer, a group-V oxide layer arranged over the bottom electrode layer, and a hafnium oxide based layer arranged over and abutting the group-V oxide layer. The RRAM cell further includes a capping layer arranged over and abutting the hafnium oxide based layer, and a top electrode layer arranged over the capping layer. A method for manufacturing the RRAM cell is also provided.
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