US Patent 9466524 Method of depositing metals using high frequency plasma
Patent 9466524 was granted and assigned to Applied Materials on October, 2016 by the United States Patent and Trademark Office.
All edits
Edits on 17 Apr, 2024
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 5 Dec, 2023
Golden AI
Edits made to:
Article (+312 characters)
Article
Patent abstract
Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.
Edits on 29 Sep, 2023
Golden AI
Edits made to:
Infobox (+5 properties)
Infobox
Patent Inventor Names
Anantha K. Subramani0
Annamalai Lakshmanan0
Dien-Yeh Wu0
Guojun Liu0
Paul F. Ma0
Edits on 14 Jul, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 09466524 Method of depositing metals using high frequency plasma US Patent 9466524 Method of depositing metals using high frequency plasma
Infobox
Patent Number
09466524
Patent Number
9466524
Edits on 23 May, 2023
Golden AI
Edits made to:
Infobox (-1 properties)
Infobox
Official Website
Edits on 6 Jun, 2022
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Website URL
Edits on 8 Jan, 2022
Golden AI
Edits made to:
Infobox (+9 properties)
US Patent 09466524 Method of depositing metals using high frequency plasma
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09466524
Date of patent
October 11, 2016
Patent application number
13742596
Date Filed
January 16, 2013
Patent primary examiner
Find more entities like US Patent 9466524 Method of depositing metals using high frequency plasma
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
