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US Patent 9508829 Nanosheet MOSFET with full-height air-gap spacer

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
May 4, 2016
Date of Patent
November 29, 2016
Patent Application Number
15146031
Patent Citations Received
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US Patent 12094972 Gate-all-around field effect transistors having end portions of nanosheet channel layers adjacent to source/drain regions being wider than the center portions
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US Patent 11664422 Nanosheet transistor with ultra low-k spacer and improved patterning robustness
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US Patent 11756996 Formation of wrap-around-contact for gate-all-around nanosheet FET
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US Patent 11756837 Hybrid nanosheet tunnel-FET/CMOS technology
Patent Inventor Names
Kangguo Cheng
0
Bruce B. Doris
0
Xin Miao
0
Michael A. Guillorn
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9508829
Patent Primary Examiner
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Allan R. Wilson

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