Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 3, 2017
Patent Application Number
14930895
Date Filed
November 3, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device that includes a gate structure on a channel region of a semiconductor device. Source and drain regions may be present on opposing sides of the channel region. The semiconductor device may further include a composite gate sidewall spacer present on a sidewall of the gate structure. The composite gate sidewall spacer may include a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid and present atop the first composition portion.
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