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US Patent 9543392 Transparent group III metal nitride and method of manufacture

Patent 9543392 was granted and assigned to Soraa on January, 2017 by the United States Patent and Trademark Office.

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Patent abstract

Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.

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