US Patent 9543392 Transparent group III metal nitride and method of manufacture
Patent 9543392 was granted and assigned to Soraa on January, 2017 by the United States Patent and Trademark Office.
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Patent abstract
Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.
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Patent Inventor Names
Dirk Ehrentraut0
Mark P. D'Evelyn0
Wenkan Jiang0
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US Patent 09543392 Transparent group III metal nitride and method of manufacture US Patent 9543392 Transparent group III metal nitride and method of manufacture
Infobox
Patent Number
095433920
Patent Number
95433920
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
095433920
Date of Patent
January 10, 2017
0Patent Application Number
144855160
Date Filed
September 12, 2014
0Official Website
Patent Primary Examiner
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US Patent 09543392 Transparent group III metal nitride and method of manufacture
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09543392
Date of patent
January 10, 2017
Patent application number
14485516
Date Filed
September 12, 2014
Patent primary examiner
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