Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 17, 2017
Patent Application Number
14745950
Date Filed
June 22, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
An object is to provide a structure of a transistor which has a channel formation region formed using an oxide semiconductor and a positive threshold voltage value, which enables a so-called normally-on switching element. The transistor includes an oxide semiconductor stack in which at least a first oxide semiconductor layer and a second oxide semiconductor layer with different energy gaps are stacked and a region containing oxygen in excess of its stoichiometric composition ratio is provided.
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