Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hideomi Suzawa0
Shunpei Yamazaki0
Masayuki Sakakura0
Date of Patent
April 2, 2024
0Patent Application Number
181330780
Date Filed
April 11, 2023
0Patent Citations
...
Patent Primary Examiner
Patent abstract
A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part of a surface of the stack. The third oxide semiconductor layer includes a first layer in contact with the stack and a second layer over the first layer. The first layer includes a microcrystalline layer, and the second layer includes a crystalline layer in which c-axes are aligned in a direction perpendicular to a surface of the first layer.
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