Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroki Ohara0
Akiharu Miyanaga0
Kengo Akimoto0
Masahiro Takahashi0
Masashi Tsubuku0
Shunpei Yamazaki0
Takatsugu Omata0
Tatsuya Honda0
...
Date of Patent
July 18, 2017
0Patent Application Number
151376130
Date Filed
April 25, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device comprising a first metal oxide film, an oxide semiconductor film, a second metal oxide film, a gate insulating film, and a gate electrode is provided. The oxide semiconductor film comprises an In—Ga—Zn—O-based metal oxide. The second metal oxide film comprises a Ga—Zn—O-based metal oxide. An amount of substance of zinc oxide with respect to gallium oxide is lower than 50% in the Ga—Zn—O-based metal oxide.
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