Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tatsuya Honda0
Shunpei Yamazaki0
Date of Patent
March 21, 2017
0Patent Application Number
150663480
Date Filed
March 10, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
One object of the present invention is to provide a structure of a transistor including an oxide semiconductor in a channel formation region in which the threshold voltage of electric characteristics of the transistor can be positive, which is a so-called normally-off switching element, and a manufacturing method thereof. A second oxide semiconductor layer which has greater electron affinity and a smaller energy gap than a first oxide semiconductor layer is formed over the first oxide semiconductor layer. Further, a third oxide semiconductor layer is formed to cover side surfaces and a top surface of the second oxide semiconductor layer, that is, the third oxide semiconductor layer covers the second oxide semiconductor layer.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.