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US Patent 9564213 Program verify for non-volatile storage
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Patent
Date Filed
February 26, 2015
Date of Patent
February 7, 2017
Patent Application Number
14632998
Patent Citations Received
US Patent 12094546 Non-volatile memory with zone based program speed adjustment
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US Patent 11657880 Access operations in capacitive sense NAND memory
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US Patent 11670379 Sense line structures in capacitive sense NAND memory
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US Patent 11678482 Memory array structures for capacitive sense NAND memory
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US Patent 11978507 Non-volatile memory with intentional overprogramming to improve short term data retention issue
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US Patent 12080356 Methods of forming integrated circuit structures for capacitive sense NAND memory
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Patent Inventor Names
Jiahui Yuan
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Yingda Dong
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Yongke Sun
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Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
9564213
Patent Primary Examiner
Tan T. Nguyen
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