US Patent 9564403 Magnetic shielding of perpendicular STT-MRAM
Patent 9564403 was granted and assigned to Infineon Technologies on February, 2017 by the United States Patent and Trademark Office.
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Patent abstract
A memory having an array of perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM) cells, wherein each cell has a magnetic layer stack. A magnetic shield disposed between the cells and having a minimum height of at least the height of the magnetic layer stacks.
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Patent Inventor Names
Karl Hofmann0
Klaus Knobloch0
Robert Allinger0
Robert Strenz0
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US Patent 09564403 Magnetic shielding of perpendicular STT-MRAM US Patent 9564403 Magnetic shielding of perpendicular STT-MRAM
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Patent Number
09564403
Patent Number
9564403
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US Patent 09564403 Magnetic shielding of perpendicular STT-MRAM
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Patent applicant
Current assignee
Patent jurisdiction
Patent number
09564403
Date of patent
February 7, 2017
Patent application number
14038959
Date Filed
September 27, 2013
Patent primary examiner
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