US Patent 9570670 Magnetic device and method of fabricating the same
Patent 9570670 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on February, 2017 by the United States Patent and Trademark Office.
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Patent abstract
Provided are a magnetic memory device and a method of fabricating the same. The device may include a magnetic tunnel junction including a lower magnetic structure, an upper magnetic structure, and a tunnel barrier interposed therebetween. The tunnel barrier may have a width greater than that of the lower magnetic structure.
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US Patent 09570670 Magnetic device and method of fabricating the same US Patent 9570670 Magnetic device and method of fabricating the same
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Patent Number
0957067000
Patent Number
957067000
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Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
095706700
Date of Patent
February 14, 2017
0Patent Application Number
137634640
Date Filed
February 8, 2013
0Official Website
Patent Primary Examiner
Edits on 27 Sep, 2022
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
095706700
Date of Patent
February 14, 2017
0Patent Application Number
137634640
Date Filed
February 8, 2013
0Official Website
Patent Primary Examiner
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US Patent 09570670 Magnetic device and method of fabricating the same
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
09570670
Date of patent
February 14, 2017
Patent application number
13763464
Date Filed
February 8, 2013
Patent primary examiner
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