Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Che-Cheng Chang0
Chih-Han Lin0
Date of Patent
April 18, 2017
0Patent Application Number
149689210
Date Filed
December 15, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A field effect transistor comprising a substrate, at least one gate stack structure, source and drain regions and an interconnect structure is described. The interconnect structure comprises a metal interconnect connected to a conductive region, an adhesion sheath structure and a cap layer. The adhesion sheath structure is disposed between the metal interconnect and inter-dielectric layers and surrounds the metal interconnect. The cap layer is disposed on the metal interconnect and covers a gap between the metal interconnect and the inter-dielectric layer.
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