US Patent 9634097 3D NAND with oxide semiconductor channel

Disclosed herein are 3D NAND memory devices having an oxide semiconductor vertical NAND channel and methods for forming the same. The oxide semiconductor may have a crystalline structure. The channel of the vertically-oriented NAND string may be cylindrically shaped. The crystalline structure has an axis that may be aligned crystalline with respect to the cylindrical shape of the vertically-oriented channel substantially throughout the vertically-oriented channel. The crystalline structure may have a first axis that is aligned parallel to the vertical channel, a second axis that is aligned perpendicular to a surface of the cylindrically shaped channel, etc.