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US Patent 9634097 3D NAND with oxide semiconductor channel
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Patent
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Date Filed
November 25, 2014
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Date of Patent
April 25, 2017
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Patent Application Number
14552964
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Patent Citations Received
US Patent 12125849 Semiconductor device, semiconductor wafer, memory device, and electronic device
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US Patent 11963352 Three-dimensional memory device with vertical field effect transistors and method of making thereof
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US Patent 11963360 Semiconductor device
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US Patent 11985828 Semiconductor device, semiconductor wafer, memory device, and electronic device
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US Patent 11984147 Semiconductor device including sense amplifier and operation method of semiconductor device
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US Patent 12069846 Memory device
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US Patent 12119353 Semiconductor device, electronic component, and electronic device
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US Patent 11776596 Data processing device and method for operating data processing device
US Patent 11843059 Semiconductor device and electronic device
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US Patent 11943929 Semiconductor device and method for manufacturing semiconductor device
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Patent Inventor Names
Johann Alsmeier
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Masaaki Higashitani
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Peter Rabkin
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
9634097
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Patent Primary Examiner
Kimberly Rizkallah
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