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US Patent 9640540 Structure and method for an SRAM circuit
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Patent
Date Filed
July 19, 2016
Date of Patent
May 2, 2017
Patent Application Number
15213542
Patent Citations Received
US Patent 11864368 Static random access memory cell
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US Patent 11910586 Integrated circuit and static random access memory thereof
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US Patent 11950401 Two-port SRAM cells with asymmetric M1 metalization
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US Patent 12027202 SRAM structures
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US Patent 11670697 Semiconductor device and manufacturing method thereof
0
US Patent 11683924 Memory device and manufacturing method
0
US Patent 11763881 Computational memory cell and processing array device using the memory cells for XOR and XNOR computations
Patent Inventor Names
Jhon Jhy Liaw
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
9640540
Patent Primary Examiner
James G Norman
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