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US Patent 9646850 High-pressure anneal

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Patent Citations Received
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US Patent 11881411 High pressure annealing process for metal containing materials
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Patent abstract

A method of treating a semiconductor device is provided including the steps of loading the semiconductor device in a processing chamber, pressurizing the processing chamber by supplying a processing gas from a pressure chamber to the processing chamber, performing a thermal anneal of the semiconductor device in the processing chamber, and depressurizing the processing chamber by supplying the processing gas from the processing chamber to the pressure chamber.

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Patent Inventor Names
Bernd Kallauch0
Dirk Noack0
Wieland Pethe0
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US Patent 11756803 Gas delivery system for high pressure processing chamber
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US Patent 11749555 Semiconductor processing system
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US Patent 11705337 Tungsten defluorination by high pressure treatment
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US Patent 11694912 High pressure and high temperature anneal chamber
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=09646850
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US Patent 09646850 High-pressure anneal US Patent 9646850 High-pressure anneal

Infobox
Patent Number
09646850
Patent Number
9646850
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=09646850
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 US Patent 09646850 High-pressure anneal

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
09646850
Date of patent
May 9, 2017
Patent application number
14791784
Date Filed
July 6, 2015
Patent primary examiner
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Julio J Maldonado

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