Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 23, 2017
Patent Application Number
15339665
Date Filed
October 31, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a first gate stack arranged about a first nanowire and a second nanowire, the first nanowire is arranged above a second nanowire, the first nanowire is connected to a first source/drain region and a second source/drain region. A second gate stack is arranged about a third nanowire and a fourth nanowire, the third nanowire is arranged above a fourth nanowire, the third nanowire is connected to a third source/drain region and a fourth source/drain region. An insulator layer having a first thickness is arranged adjacent to the first gate stack.
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