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US Patent 9678037 Two-dimensional material-based field-effect transistor sensors

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Patent
Patent
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Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
96780370
Patent Inventor Names
Katsuo Kurabayashi0
Xiaogan Liang0
Date of Patent
June 13, 2017
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Patent Application Number
148786160
Date Filed
October 8, 2015
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Patent Citations Received
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US Patent 11670707 Integrated assemblies and methods of forming integrated assemblies
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US Patent 11988628 Container including analyte sensing device
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US Patent 11913901 Analyte sensing device
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Patent Primary Examiner
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Brian J. Sines
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Patent abstract

Atomically layered transition metal dichalcogenides (TMDCs) exhibit a significant potential to enable low-cost transistor biosensors that permit single-molecule-level quantification of biomolecules. Two different principles for operating such biosensors are presented. In one arrangement, antibody receptors are functionalized on an insulating layer deposited onto the channel of the transistor. The charge introduced through antigen-antibody binding is capacitively coupled with the channel and shifts the threshold voltage without significantly changing the transconductance. In another arrangement, antibodies are functionalized directly on the channel of the transistor. Antigen-antibody binding events mainly modulate the ON-state transconductance, which is attributed to the disordered potential formed in channel material.

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