Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kilho Lee0
Yoonjong Song0
Shinhee Han0
Date of Patent
June 27, 2017
0Patent Application Number
149642510
Date Filed
December 9, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Magnetic memory devices are provided. A magnetic memory device includes a Magnetic Tunnel Junction (MTJ) structure on a contact. Moreover, the magnetic memory device includes an insulating structure and an electrode between the MTJ structure and the contact. In some embodiments, a first contact area of the electrode with the MTJ structure is smaller than a second contact area of the insulating structure with the MTJ structure.
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