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US Patent 9691816 Magnetic memory devices

Patent 9691816 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on June, 2017 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 12022738 Methods for manufacturing magnetoresistive stack devices
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Patent abstract

Magnetic memory devices are provided. A magnetic memory device includes a Magnetic Tunnel Junction (MTJ) structure on a contact. Moreover, the magnetic memory device includes an insulating structure and an electrode between the MTJ structure and the contact. In some embodiments, a first contact area of the electrode with the MTJ structure is smaller than a second contact area of the insulating structure with the MTJ structure.

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Patent Inventor Names
Kilho Lee0
Shinhee Han0
Yoonjong Song0
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US Patent 09691816 Magnetic memory devices US Patent 9691816 Magnetic memory devices

Infobox
Patent Number
096918160
Patent Number
96918160
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=096918160
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Infobox
Is a
Patent
Patent
0
Current Assignee
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
096918160
Date of Patent
June 27, 2017
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Patent Application Number
149642510
Date Filed
December 9, 2015
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=096918160
Patent Primary Examiner
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Thao P. Le
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=09691816
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 US Patent 09691816 Magnetic memory devices

Infobox
Is a
Patent
Patent
Current assignee
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
09691816
Date of patent
June 27, 2017
Patent application number
14964251
Date Filed
December 9, 2015
Patent primary examiner
‌
Thao P. Le

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