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US Patent 9691850 Vertical transistor with air-gap spacer

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
May 24, 2016
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Date of Patent
June 27, 2017
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Patent Application Number
15163059
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Patent Citations Received
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US Patent 11908890 Isolation structure for stacked vertical transistors
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US Patent 12094972 Gate-all-around field effect transistors having end portions of nanosheet channel layers adjacent to source/drain regions being wider than the center portions
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Patent Inventor Names
Kangguo Cheng
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Tak H. Ning
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9691850
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Patent Primary Examiner
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Mark Tornow
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